Influence of Electron Beam Irradiation on the Electrical and Optical Properties of InGaZnO Thin Film Transistor | Zendy

In-Hwan Cho | Zendy; Hai-Woong Park | Zendy; Chan-Joong Kim | Zendy; ByungHyuk Jun | Zendy

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Influence of Electron Beam Irradiation on the Electrical and Optical Properties of InGaZnO Thin Film Transistor

Author(s) -

In-Hwan Cho,

Hai-Woong Park,

Chan-Joong Kim,

ByungHyuk Jun

Publication year - 2017

Publication title -

korean journal of materials research

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.153

H-Index - 10

eISSN - 2287-7258

pISSN - 1225-0562

DOI - 10.3740/mrsk.2017.27.6.345

Subject(s) - materials science , irradiation , x ray photoelectron spectroscopy , electron , threshold voltage , semiconductor , band gap , electron beam processing , ellipsometry , optoelectronics , fermi level , thin film transistor , analytical chemistry (journal) , cathode ray , transistor , thin film , voltage , nuclear magnetic resonance , nanotechnology , chemistry , electrical engineering , physics , quantum mechanics , layer (electronics) , nuclear physics , engineering , chromatography

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