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Contact Area-Dependent Electron Transport in Au/n-type Ge Schottky Junction
Author(s) -
Hogyoung Kim,
Da Hye Lee,
Hye Seon Myung
Publication year - 2016
Publication title -
han'gug jaeryo haghoeji/han-guk jaeryo hakoeji
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.153
H-Index - 10
eISSN - 2287-7258
pISSN - 1225-0562
DOI - 10.3740/mrsk.2016.26.8.412
Subject(s) - thermionic emission , quantum tunnelling , materials science , biasing , condensed matter physics , current (fluid) , schottky diode , schottky barrier , current density , reverse bias , contact area , electron , voltage , optoelectronics , electrical engineering , physics , diode , thermodynamics , quantum mechanics , composite material , engineering

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