Open AccessEffect of First-Stage Growth Manipulation and Polarity of SiC Substrates on AlN Epilayers Grown Using Plasma-Assisted Molecular Beam Epitaxy
Author(s) -
uy Duc Le D,
동엽 김,
SoonKu Hong
Publication year - 2014
Publication title -
korean journal of materials research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.153
H-Index - 10
eISSN - 2287-7258
pISSN - 1225-0562
DOI - 10.3740/mrsk.2014.24.5.266
Subject(s) - materials science , hillock , molecular beam epitaxy , substrate (aquarium) , silicon carbide , aluminium , epitaxy , plasma , nitride , optoelectronics , hexagonal crystal system , crystallography , nanotechnology , composite material , layer (electronics) , chemistry , physics , quantum mechanics , oceanography , geology
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