Open AccessSilicide Formation of Atomic Layer Deposition Co Using Ti and Ru Capping Layer
Author(s) -
Jaehong Yoon,
Han Bo Ram Lee,
Gil Ho Gu,
Chan Gyung Park,
Hyungjun Kim
Publication year - 2012
Publication title -
korean journal of materials research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.153
H-Index - 10
eISSN - 2287-7258
pISSN - 1225-0562
DOI - 10.3740/mrsk.2012.22.4.202
Subject(s) - materials science , layer (electronics) , atomic layer deposition , silicide , deposition (geology) , chemical engineering , metallurgy , nanotechnology , engineering physics , engineering , paleontology , sediment , biology
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