Open AccessEnhancement of Light Extraction Efficiency of GaN Light Emitting Diodes Using Nanoscale Surface Corrugation
Author(s) -
재우 정,
종율 정,
사라 김,
준호 정
Publication year - 2012
Publication title -
korean journal of materials research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.153
H-Index - 10
eISSN - 2287-7258
pISSN - 1225-0562
DOI - 10.3740/mrsk.2012.22.11.636
Subject(s) - materials science , light emitting diode , optoelectronics , indium tin oxide , diode , substrate (aquarium) , finite difference time domain method , nanoimprint lithography , semiconductor , indium gallium nitride , nanoscopic scale , optics , gallium nitride , nanotechnology , layer (electronics) , physics , medicine , oceanography , alternative medicine , pathology , fabrication , geology
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