Open AccessDeposition and Electrical Properties of Al₂O₃ and HfO₂ Films Deposited by a New Technique of Proximity-ScanALD (PS-ALD)
Author(s) -
Yong-Soo Kwon,
Mi-Young Lee,
Jae-Eung Oh
Publication year - 2008
Publication title -
korean journal of materials research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.153
H-Index - 10
eISSN - 2287-7258
pISSN - 1225-0562
DOI - 10.3740/mrsk.2008.18.3.148
Subject(s) - atomic layer deposition , materials science , deposition (geology) , injector , substrate (aquarium) , wafer , volume (thermodynamics) , dielectric , nanotechnology , layer (electronics) , volumetric flow rate , analytical chemistry (journal) , chemical engineering , optoelectronics , chemistry , organic chemistry , mechanical engineering , paleontology , sediment , engineering , biology , oceanography , physics , quantum mechanics , geology
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