Crystallographic and Interfacial Characterization of Al2O3 and ZrO2 Dielectric Films Prepared by Atomic Layer Chemical Vapor Deposition on the Si Substrate
Author(s) -
중정 김,
준모 양,
관용 임,
흥재 조,
주철 박,
순영 이,
정선 김,
근홍 김,
대규 박
Publication year - 2003
Publication title -
korean journal of materials research
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.153
H-Index - 10
eISSN - 2287-7258
pISSN - 1225-0562
DOI - 10.3740/mrsk.2003.13.8.497
Subject(s) - materials science , atomic layer deposition , chemical vapor deposition , layer (electronics) , characterization (materials science) , substrate (aquarium) , chemical engineering , dielectric , deposition (geology) , combustion chemical vapor deposition , thin film , nanotechnology , optoelectronics , carbon film , oceanography , sediment , engineering , biology , geology , paleontology
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom