Open AccessSilicon Oxidation in Inductively-Coupled N2O Plasma and its Effect on Polycrystalline-Silicon Thin Film Transistors
Author(s) -
Man-Ho Won,
Sungchul Kim,
Jin-Hyung Ahn,
BoHyun Kim,
Byung-Tae Ahn
Publication year - 2002
Publication title -
han'gug jaeryo haghoeji/han-guk jaeryo hakoeji
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.153
H-Index - 10
eISSN - 2287-7258
pISSN - 1225-0562
DOI - 10.3740/mrsk.2002.12.9.724
Subject(s) - materials science , inductively coupled plasma , polycrystalline silicon , silicon , plasma , optoelectronics , thin film transistor , transistor , nanotechnology , electrical engineering , layer (electronics) , physics , engineering , quantum mechanics , voltage