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Advancing in-memory Arithmetic Based on CMOS-integrable Memristive Crossbar Structures
Author(s) -
Eike Linn,
Heidemarie Schmidt
Publication year - 2021
Language(s) - English
DOI - 10.37394/232020.2021.1.12
Subject(s) - crossbar switch , memristor , computer science , adder , cmos , computer architecture , resistive random access memory , integrable system , electronic engineering , parallel computing , electrical engineering , voltage , engineering , physics , telecommunications , mathematical physics
Memristive computing will be advantageous in large-scale, highly parallel mixed-mode processing architectures because processing can be performed directly within memristive memory architectures and intrachip communication can be implemented by a memristive crossbar structure with reconfigurable logic gates. Here we report on the development of a new concept for in-memory adders, using XOR functionality. Exploited memristive crossbar structures are based on memristive complementary resistive switches, e.g. TaOx, and BiFeO3.

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