Open AccessFerromagnetic Schottky Contact for GaN Based Spin Devices
Author(s) -
Tarkeshwar C. Patil
Publication year - 2021
Publication title -
wseas transactions on electronics/wseas transactions on electronics
Language(s) - English
Resource type - Journals
eISSN - 2415-1513
pISSN - 1109-9445
DOI - 10.37394/232017.2021.12.8
Subject(s) - schottky barrier , schottky diode , ferromagnetism , condensed matter physics , materials science , spin (aerodynamics) , metal–semiconductor junction , optoelectronics , wide bandgap semiconductor , constant (computer programming) , physics , computer science , diode , thermodynamics , programming language
In this paper, ferromagnetic Schottky contacts for GaN based spin injection are being studied. The electrical characterization of this Co/n-GaN and Fe/n-GaN Schottky contacts showing the zero-bias barrier height comes closer to unity as the temperature is increased. Also, the Richardson constant is extracted for this Schottky contact. Both the zero-bias barrier height and the Richardson constant are verified both experimentally as well as theoretically. Thus, this Schottky contacts will serve as spin injector for GaN based spin devices specifically for GaCrN based devices