Open AccessAnalysis of Electrical and Thermal Models for Pulsed IMPATT Diode Simulation
Author(s) -
Alexander Zemliak,
Eugene Machusky
Publication year - 2021
Publication title -
wseas transactions on circuits and systems/wseas transactions on circuits
Language(s) - English
Resource type - Journals
eISSN - 2224-266X
pISSN - 1109-2734
DOI - 10.37394/23201.2021.20.19
Subject(s) - impatt diode , diode , materials science , step recovery diode , power (physics) , nonlinear system , optoelectronics , thermal , electronic engineering , computational physics , mechanics , physics , engineering , schottky diode , quantum mechanics , meteorology
Some nonlinear models are presented for modeling and analyzing IMPATT high-power pulse diodes. These models are suitable for analyzing different operating modes of the oscillator. The first model is a precise one, which describes all important electrical phenomena on the basis of the continuity equations and Poisson´s equation, and it is correct until 300 GHz. The second approximate mathematical model suitable for the analysis of IMPATT diode stationary operation oscillator and for optimization of internal structure of the diode. The temperature distribution in the semiconductor structure is obtained using the special thermal model of the IMPATT diode, which is based on the numerical solution of the non-linear thermal conductivity equation. The described models can be applied for the analysis, optimization and practical design of pulsedmode millimetric IMPATT diodes. It can also be used to evaluate the thermal behavior of diodes, to correctly select the shape and amplitude of a supply pulse, and to design various types of high-power pulsed millimeter IMPATT diodes with a complex doping profile with improved characteristics.