
HIGH CURRENT, MULTI-FINGER InGaAs/InP HETEROSTRUCTURE BIPOLAR TRANSISTOR WITH <I>f</I><SUB>t</SUB> OF 176GHz
Author(s) -
Zhi Jin,
Wei Cheng,
Xinyu Liu,
Aidong Xu,
Ming Qi
Publication year - 2009
Publication title -
hongwai yu haomibo xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.206
H-Index - 27
ISSN - 1001-9014
DOI - 10.3724/sp.j.1010.2009.00081
Subject(s) - heterojunction , optoelectronics , current (fluid) , materials science , bipolar junction transistor , transistor , electrical engineering , voltage , engineering