Open AccessAREA OF P-N JUNCTION WITH THE TUNNEL BREAKDOWN MECHANISM AS A FACTOR IN THE DESIGN OF SEMICONDUCTOR DEVICES
Author(s) -
S. P. Skornyakov
Publication year - 2020
Publication title -
èlektronnaâ tehnika. seriâ 2. poluprovodnikovye pribory
Language(s) - English
Resource type - Journals
ISSN - 2073-8250
DOI - 10.36845/2073-8250-2020-259-4-25-30
Subject(s) - breakdown voltage , zener diode , diode , ohm , voltage , materials science , avalanche diode , optoelectronics , semiconductor , electrical engineering , avalanche breakdown , transistor , engineering
This article presents the results of an experimental study on the influence ofp-n junction area (Sp.„) on the breakdown voltage (Ubr) of low-voltage p-n structures with avalanche, mixed and tunnel breakdown mechanisms. The nature and behaviour of the experimentally obtained Ubr(Sp.„) curves fully correspond to the well-known distribution ofp-n junction curves by the type of an electric breakdown. 'For Ubr > 6.7 V, the avalanche breakdown voltage ofp-n junctions remains unchanged over a wide range ofSp.„ values. Below ~6. 7 V, in the region of mixed breakdown ~(6.7 - 4.7) V, Ubr decreases with an increase of Sp-n for fixed values ofpr. Moreover, for pr (0.007 ^ 0.001) Ohms cm, in the region of the tunnel breaksdown mechanism (Ubr <4.7 V), , Ubr(Sp.„J curve shows non-linear behaviou.The effect of non-linear dependence between Ubr and (Sp.„.t) for p-n junctions with tunnel breakdown is used in the designs of low-voltage Zener diodes and voltage regidators with Ust7 Ubr less than 5 V. The dependence between Ubr.t and (Sp-„.t) for p-n structures with tunnel breakdown can be used in designing novel voltage converters with negative resistance. In particidar, this article shows the implemented experimental design of a voltage converter based on two p+-n+junctions with breakdown voltages of ~4.3 V.cmd ~2.3 V. based on p-type silicon w ith a specific resistance of 20 Ohms cm, controlled by a MOSFET, system.