Open AccessCURRENT COLLAPSE MEASUREMENTS IN PULSED GAN TRANSISTORS
Author(s) -
И.М. Аболдуев,
N. V. Alkeev,
V. S. Belyaev,
E. V. Kaevitser,
I. D. Kashlakov
Publication year - 2020
Publication title -
èlektronnaâ tehnika. seriâ 2. poluprovodnikovye pribory
Language(s) - English
Resource type - Journals
ISSN - 2073-8250
DOI - 10.36845/2073-8250-2020-259-4-12-18
Subject(s) - high electron mobility transistor , operability , materials science , optoelectronics , transistor , current (fluid) , semiconductor , engineering physics , electronic engineering , voltage , electrical engineering , computer science , reliability engineering , engineering
The article discusses the issues of design and methodology related to the current-voltage (I-V) characteristics of a GaN HEMT. Reliable I-V characteristics show the operability of a semiconductor device, provide initial data for functional application of the device, and provide insight into the quality and reproducibility of the technological process. The type and behavior of I–V characteristics are influenced by the design and technological features of a GaN HEMT. Measurements of I-V characteristics in continuous and pulsed operation modes provide more details about the electrical and thermal characteristics of the devices under study.