Open AccessAIR-COOLED 350 W X-BAND SOLID-STATE POWER AMPLIFIER
Author(s) -
V. E. Akinin,
Oleg V. Borisov,
К. А. Иванов,
Yu. V. Kolkovskiy Sc.D.,
В.М. Миннебаев,
Al.V. Redka
Publication year - 2020
Publication title -
èlektronnaâ tehnika. seriâ 2. poluprovodnikovye pribory
Language(s) - English
Resource type - Journals
ISSN - 2073-8250
DOI - 10.36845/2073-8250-2020-258-3-43-52
Subject(s) - amplifier , linear amplifier , rf power amplifier , direct coupled amplifier , electrical engineering , power bandwidth , power (physics) , materials science , power added efficiency , operational amplifier , engineering , physics , cmos , quantum mechanics
In this paper we present the results of the design and production of an air-cooled X-band solid-state power amplifier based on AlGaN/GaN/SiC Schottky FET. The power amplifier includes: preliminary power amplifier, output power amplifiers, set of secondary power supplies, digital control unit, monitoring system for the power amplifier performance, set of microwave power waveguide combiners.