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SIMULATION OF THE PHOTOSENSITIVE ELEMENT BASED ON STRUCTURE OF InGaAs/AlNaS/InGaAs
Author(s) -
M.A. Zinoviev,
M.V. Mezhennyi,
A.S. Drenin,
E.S. Rogovskiy,
O.V. Khoruzhenko,
O.R. Abdulaev
Publication year - 2018
Publication title -
èlektronnaâ tehnika. seriâ 2. poluprovodnikovye pribory
Language(s) - English
Resource type - Journals
ISSN - 2073-8250
DOI - 10.36845/2073-8250-2018-249-2-19-28
Subject(s) - optoelectronics , element (criminal law) , materials science , political science , law

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