Open AccessComprehensive Examination on Resistive Random Access Memory
Author(s) -
Dr.K.G. Dharani,
Dr.S. Bhavani,
S. Hridhya
Publication year - 2019
Publication title -
international journal of recent technology and engineering
Language(s) - English
Resource type - Journals
ISSN - 2277-3878
DOI - 10.35940/ijrte.d8398.118419
Subject(s) - resistive random access memory , neuromorphic engineering , materials science , optoelectronics , resistive touchscreen , electrical engineering , thermal conduction , non volatile memory , voltage , schottky diode , electrical conductor , nanotechnology , computer science , engineering physics , engineering , composite material , artificial intelligence , diode , artificial neural network
With the latest advances in materials science, resistive random access memory (RRAM) devices are attracting non-volatile, low power consumption, non-destructive read, and high density memory. Related performance parameters for RRAM devices include operating voltage, operating speed, resistivity, durability, retention time, device yield, and multi-level storage. Numerous resistive mechanisms, such as conductive filaments, space charge limited conduction, trap charging and discharging, Schottky emission, and pool-Frenkel emission, have been proposed to explain the resistance switches of RRAM devices. Therefore, in this work, different oxide-based random access memories (RRAMs) were provided for comprehensive investigation of neuromorphiccalculations. With the development of RRAM, the physical mechanism of conduction, the basic history of neuromorphic calculations begins. Finally, suggestions for future research, as well as waiting for the challenges of RRAM equipment, are given.