Field-Plate Geometry Dependent Electrostatics and Strain Mapping in AlGaAs/GaAs HEMTs

GaAs based power transistors provides higher switching speed compared to conventional Si transistors. The high electron mobility transistors (HEMTs) with AlGaAs/GaAs have got recent attentions for alternative suitable candidate for high frequency operation. The primary focus of the work is to study the electrostatics and stress/strain profile mapping due to the presence of field plate in AlGaAs/GaAs high electron mobility transistors. Using TCAD simulations, we examine the stress strain profile mapping as a function of field plate geometry and also study the electrostatics as function of field plate geometry and applied electric field.