Open AccessField-Plate Geometry Dependent Electrostatics and Strain Mapping in AlGaAs/GaAs HEMTs
Author(s) -
Rajib Kumar Nanda,
T. P. Dash
Publication year - 2019
Publication title -
international journal of recent technology and engineering
Language(s) - English
Resource type - Journals
ISSN - 2277-3878
DOI - 10.35940/ijrte.d8028.118419
Subject(s) - electrostatics , transistor , materials science , electric field , electron mobility , field (mathematics) , stress (linguistics) , optoelectronics , field effect transistor , high electron mobility transistor , strain (injury) , electrical engineering , voltage , physics , engineering , linguistics , philosophy , mathematics , quantum mechanics , pure mathematics , medicine
GaAs based power transistors provides higher switching speed compared to conventional Si transistors. The high electron mobility transistors (HEMTs) with AlGaAs/GaAs have got recent attentions for alternative suitable candidate for high frequency operation. The primary focus of the work is to study the electrostatics and stress/strain profile mapping due to the presence of field plate in AlGaAs/GaAs high electron mobility transistors. Using TCAD simulations, we examine the stress strain profile mapping as a function of field plate geometry and also study the electrostatics as function of field plate geometry and applied electric field.