Open AccessNext Generation Logic Gate Designs using Improved Polarity Control Bipolar Junction Transistor
Author(s) -
Lokesh Kumar Bramhane,
Santosh D. Chede,
Premanand K. Kadbe,
Balasaheb Patil,
Sudhir B. Lande
Publication year - 2019
Publication title -
international journal of recent technology and engineering
Language(s) - English
Resource type - Journals
ISSN - 2277-3878
DOI - 10.35940/ijrte.d6887.118419
Subject(s) - polarity (international relations) , nand gate , bipolar junction transistor , reconfigurability , logic gate , transistor , xor gate , electrical engineering , pass transistor logic , computer science , emitter coupled logic , voltage , materials science , optoelectronics , electronic engineering , engineering , chemistry , telecommunications , biochemistry , cell
In this paper, we have proposed a dopingless reconfigurable polarity control bipolar junction transistor (PC-BJT) with enhanced current gain and currentoff frequency. It can be used as both n-i-n or p-i-p type transistors by applying an appropriate voltage (±1 V) on its polarity control electrodes. It is very first time that BJTs are used to implemented in XOR logic gate design with the concepts of reconfigurability and polarity control electrodes. For this, a new symbol is introduced to demonstrate the behavior of logic gates. Moreover, series and parallel combination of the proposed device exhibits the behavior of two-input NAND-NOR (PC=+1 V) and AND-OR (PC=-1 V) gates. Moreover, the proposed device exhibits the low on-time voltage and improved breakdown voltage compared to the conventional PC-BJT.