Open AccessEnergy Efficient Bandgap Reference Generator for RFID Transponder EEPROM in 130 nm CMOS Process
Author(s) -
Mohammad Marufuzzaman,
Labonnah Farzana Rahman,
Mamun Bin Ibne Reaz,
Lubna Alam,
Lariyah Mohd Sidek
Publication year - 2019
Publication title -
international journal of recent technology and engineering
Language(s) - English
Resource type - Journals
ISSN - 2277-3878
DOI - 10.35940/ijrte.d5151.118419
Subject(s) - bandgap voltage reference , transponder (aeronautics) , cmos , electrical engineering , voltage reference , power (physics) , eeprom , electronic engineering , amplifier , computer science , voltage , engineering , physics , quantum mechanics , aerospace engineering , dropout voltage
Reducing power dissipation of any circuit can make that circuit more energy-efficient and at the same time promise stability. Recent researchers mainly focus on controlling and monitoring low power designs for different low power applications, wireless systems such as radio frequency identification (RFID) transponder. Therefore, generating an internal reference voltage (VR) for the power management unit is the key challenges for researchers to design such applications. Bandgap reference (BGR) is an essential module that assures temperature and independent VR supply in analog circuits. In this research, an improved BGR is designed with the self-startup circuit, bandgap core and an operational amplifier (OP-AMP) to generate a stable VR. A low-power BGR is simulated using Silterra 130 nm CMOS technology. The designed BGR generates a VR of 1.1 V and consumes only 1.4 µA power form 1.2 V power supply voltage. Moreover, it has a temperature coefficient of 41.6 ppm/℃.