Open AccessImpact of Back Surface Field (BSF) Layers in Cadmium Telluride (CdTe) Solar Cells from Numerical Calculation
Author(s) -
Camellia Doroody,
Hasrul Nisham Rosly,
Muhammad Najib Harif,
Kazi Sajedur Rahman,
Yunus Yusoff,
S. Fazlili,
Sieh Kiong Tiong,
Nowshad Amin,
M. A. Matin
Publication year - 2019
Publication title -
international journal of recent technology and engineering
Language(s) - English
Resource type - Journals
ISSN - 2277-3878
DOI - 10.35940/ijrte.d5143.118419
Subject(s) - cadmium telluride photovoltaics , materials science , solar cell , ohmic contact , optoelectronics , layer (electronics) , nanotechnology
In this study, numerical simulation has been executed using Solar Cell Capacitance Simulator (SCAPS-1D) to study the prospect of favourable efficiency and stable CdS/CdTe cell in various cell configurations. A basic structure of CdS/CdTe cell is studied with 4 µm CdTe as absorber layer, 100 nm tin oxide (SnO2 ) as front contact and 25 nm cadmium sulfides (CdS) as buffer layer. Four back surface fields (BSF) layers namely ZnTe, ZnTe: Cu, Cu2Te and MoTe2 are investigated to reduce the minority carrier recombination at back contact. The cell structure of glass/SnO2 /CdS/CdTe/MoTe2 has shown a nearly ohmic contact with CdTe with the highest efficiency of 17.02% (Voc=0.91 V, Jsc=24.79 mA/cm2 , FF=75.41). Simulation results have verified that MoTe2 as BSF layer is appropriate for an efficient CdS/CdTe cell. Moreover, it is found that a few nanometres (about 40 nm) of BSF layer are enough to achieve high efficiency. For MoTe2 layer, more than 17% efficiency has been achieved compared to other BSF layers.