Analytical 2D Modeling of Surface Potential and Threshold Voltage for Lightly Doped Substrate NMOS | Zendy

Nitin Sachdeva | Zendy; Tarun Kumar Sachdeva | Zendy

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Analytical 2D Modeling of Surface Potential and Threshold Voltage for Lightly Doped Substrate NMOS

Author(s) -

Nitin Sachdeva,

Tarun Kumar Sachdeva

Publication year - 2019

Publication title -

international journal of recent technology and engineering (ijrte)

Language(s) - English

Resource type - Journals

ISSN - 2277-3878

DOI - 10.35940/ijrte.c5320.118419

Subject(s) - threshold voltage , nmos logic , mosfet , materials science , drain induced barrier lowering , overdrive voltage , reverse short channel effect , voltage , optoelectronics , transistor , doping , work function , field effect transistor , substrate (aquarium) , negative bias temperature instability , electrical engineering , nanotechnology , engineering , oceanography , layer (electronics) , geology

Reducing the device dimensions leads to scaling of various parameters like junction depth, supply voltage and gate oxide thickness and results to the variation of threshold voltage. Threshold voltage variations can cause serious design problems. So threshold voltage can be adjusted by various ways which is the most important parameter of the MOSFET. This paper depicts the analytical modeling and simulation of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The expression for potential at source and drain ends and threshold voltage has been derived and the theoretical values are compared with simulated values. From simulation results from SILVACO TAD tool, threshold voltage of 0.22V is achieved at a work-function of 4.12eV

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