Open AccessAnalytical 2D Modeling of Surface Potential and Threshold Voltage for Lightly Doped Substrate NMOS
Author(s) -
Nitin Sachdeva,
Tarun Kumar Sachdeva
Publication year - 2019
Publication title -
international journal of recent technology and engineering
Language(s) - English
Resource type - Journals
ISSN - 2277-3878
DOI - 10.35940/ijrte.c5320.118419
Subject(s) - threshold voltage , mosfet , nmos logic , materials science , overdrive voltage , reverse short channel effect , drain induced barrier lowering , voltage , optoelectronics , transistor , doping , work function , negative bias temperature instability , substrate (aquarium) , field effect transistor , electrical engineering , engineering , nanotechnology , oceanography , geology , layer (electronics)
Reducing the device dimensions leads to scaling of various parameters like junction depth, supply voltage and gate oxide thickness and results to the variation of threshold voltage. Threshold voltage variations can cause serious design problems. So threshold voltage can be adjusted by various ways which is the most important parameter of the MOSFET. This paper depicts the analytical modeling and simulation of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The expression for potential at source and drain ends and threshold voltage has been derived and the theoretical values are compared with simulated values. From simulation results from SILVACO TAD tool, threshold voltage of 0.22V is achieved at a work-function of 4.12eV