Open AccessCarrier Transport Properties of GAN in High Electric Field
Author(s) -
Pei Ling Cheang,
Kevin Eng,
Lay Lian Teo
Publication year - 2019
Publication title -
international journal of recent technology and engineering
Language(s) - English
Resource type - Journals
ISSN - 2277-3878
DOI - 10.35940/ijrte.c1017.1083s19
Subject(s) - electric field , impact ionization , drift velocity , ionization , saturation velocity , electron , atomic physics , velocity saturation , electron mobility , monte carlo method , work function , ionization energy , materials science , condensed matter physics , physics , ion , voltage , nanotechnology , mosfet , statistics , mathematics , transistor , quantum mechanics , layer (electronics)
The Monte Carlo (MC) simulation of the carrier transport mechanisms including impact ionization at high electric field in GaN is presented. Two non-parabolic conduction and valence bands were considered for the simulation of transport properties of electron and hole respectively. The carriers’ drift velocity and energy are simulated as a function of applied electric field at room temperature. The maximum velocity of electron is 2.85 × 107 cm/s at 140 kV/cm. The velocity of electron is saturated at 2 × 107 cm/s at electric field greater than 300 kV/cm. In our work, the velocity of hole is 5 × 106 cm/s at 500 kV/cm. Electron energy increases as the electric field increase and fluctuated at electric field greater than 600 kV/cm when impact ionization occurred. The impact ionization rates are obtained by using modified Keldysh equation. The hole impact ionization rate is higher than that of electron. This work also shows higher electron impact ionization coefficient than that of hole at electric field greater than 4.04 MV/cm