Open AccessAn Analytical Modeling for Dual Source Vertical Tunnel Field Effect Transistor
Author(s) -
Soniya*,
Balwinder Raj,
Shailendra Singh,
Girish Wadhwa
Publication year - 2019
Publication title -
international journal of recent technology and engineering
Language(s) - English
Resource type - Journals
ISSN - 2277-3878
DOI - 10.35940/ijrte.b2253.098319
Subject(s) - tunnel field effect transistor , subthreshold slope , electric field , transistor , subthreshold conduction , poisson's equation , current (fluid) , field (mathematics) , boundary value problem , dual (grammatical number) , electric potential , poisson distribution , field effect transistor , computational physics , boundary (topology) , point (geometry) , physics , electrical engineering , mathematical analysis , mathematics , voltage , geometry , engineering , quantum mechanics , art , statistics , literature , pure mathematics
The given paper proposes the 2D analytical modeling of surface potential and electric field for a Dual Source Vertical Tunnel Field Effect Transistor (DSV-TFET). The 2-D Poisson equations are solved by parabolic approximation method, with the help of suitable boundary conditions and analytical expressions for surface potential and electric field distribution in DSV-TFET. The analytical results of proposed model are compared with simulation results drive using SILVACO TCAD tool, whereas in our proposed device DSV-TFET provides the high on current (ION=1.74×10-4 A/µm), low OFF current (IOFF= 6.92 ×10-13 A/µm), ION/IOFF current ratio in order of 108 to 109 with the minimum point of average subthreshold slope of 3.47 mV/decade which can be used for low power application.