Open AccessDesign and Analysis of Gate All Around Tunnel FET based Ring Oscillator Circuit
Author(s) -
Umesh Dutta,
M.K Soni,
Manisha Pattanaik
Publication year - 2019
Publication title -
international journal of recent technology and engineering
Language(s) - English
Resource type - Journals
ISSN - 2277-3878
DOI - 10.35940/ijrte.b1968.078219
Subject(s) - ring oscillator , vackář oscillator , delay line oscillator , cmos , digitally controlled oscillator , pierce oscillator , ring (chemistry) , variable frequency oscillator , electrical engineering , voltage controlled oscillator , rc oscillator , waveform , physics , optoelectronics , electronic engineering , voltage , engineering , chemistry , organic chemistry
In this work, we have designed and simulated a Gate All Around TFET (GAATFET) based 3 stage ring oscillator circuit and compared its performance with the CMOS based counterpart. The results of SPICE simulations indicate that GAATFET based ring oscillator circuit consumes 3.5 times lower power consumption in active mode than CMOS based ring oscillator. However, 0.43 ns and 0.17 ns of propagation delay is observed for GAATFET based ring oscillator and CMOS based ring oscillator circuit respectively. The obtained output waveform frequency for CMOS based ring oscillator is 2.5 times higher than the GAAATFET based ring oscillator. Further, undershoot is also investigated and it is found that the amplitude of undershoot in case of GAATFET based oscillator is roughly 6.5 times more as compared to CMOS based counterpart. The undershoot and delay observed in case of GAATFET based ring oscillator can be over-shaded by the fact that it has lower active power consumption than the CMOS based ring oscillator. Simulation results signify that GAATFET based ring oscillator can be deployed in future low power VLSI circuits and systems.