Open AccessDesign and Analyze the Effect of InGaN Nano-Material in Light Emitting Diode towards Improving the Performance of Quantum Efficiency
Author(s) -
Shamsunder Manataklata,
K M Singh
Publication year - 2019
Publication title -
international journal of recent technology and engineering
Language(s) - English
Resource type - Journals
ISSN - 2277-3878
DOI - 10.35940/ijrte.b1096.078219
Subject(s) - light emitting diode , optoelectronics , metalorganic vapour phase epitaxy , materials science , sapphire , quantum efficiency , nano , epitaxy , diode , substrate (aquarium) , electric field , planar , nanotechnology , optics , laser , computer science , layer (electronics) , composite material , oceanography , physics , quantum mechanics , geology , computer graphics (images)
The efficiency of an InGaN light-emitting diode (LED) is critically dependent on internal electric field (IEF) exhibiting in its active region. In the present work we examined the properties of the NSSP light emitters. Also we developed a novel InGaN LED structure based on a Nano-structured semi-polar (NSSP) GaN template. This new structure can be fabricated on a mature c-plane substrate including low cost sapphire without any ex situ patterning. From this approach we got results in which we can see that with the help of RT PL, 30% enhancement in IQE will be observed in NSSP MQWs as compared to c-plane planar MQWs with the help of SEM and TEM imaging tools. We have successfully ramped up an MOCVD tool for the epitaxial growth of GaN LEDs for this study.