Open Access14 Transistors CNTFET and CMOS Full Adder Cell for Modified GDI Technique
Author(s) -
Priyanka*,
S.K. Singh,
Dr Piyush Dua
Publication year - 2019
Publication title -
international journal of innovative technology and exploring engineering
Language(s) - English
Resource type - Journals
ISSN - 2278-3075
DOI - 10.35940/ijitee.l3233.1081219
Subject(s) - carbon nanotube field effect transistor , adder , cmos , transistor , power–delay product , computer science , electronic engineering , very large scale integration , microprocessor , field effect transistor , electrical engineering , computer hardware , engineering , voltage
Adder Is Basic Unit For Any Digital System, Dsp And Microprocessor. The Main Issue In Design High Speed Full Adder Cell With The Low Power Dissipation. As We Know Cmos Technology Used For Vlsi Designing Cmos Has Many Drawbacks As High Power Short Channel Effect Etc. Then Cntfet (Carbon Nanotube Field Effect Transistor) Has Been Developed Which Has Same Structure As Cmos. The Difference Between Structure Of Cmos And Cntfet Is Their Channel. In Cntfet Channel Is Replaced By Carbon Nanotube. In This Paper We Compare Full Adder Circuit Using Cntfet With Gdi Technique And Cmos Implementation Of Adder Which Gdi Technique. Gdi Technique Is Used For Speed And Power Optimization In Digital Circuit. This Can Also Reduce The Count Of Transistor Which Affects The Size Of Device.