z-logo
open-access-imgOpen Access
Methods for Increasing the Radiation Resistance of 3D Integration Memory Modules for Aerospace Applications
Author(s) -
Science Manufacturing Complex ",
Р. С. Литвиненко,
, Moscow, Zelenograd, Russia.,
I.V. Prokofiev,
V.M. Matveev
Publication year - 2019
Publication title -
international journal of innovative technology and exploring engineering
Language(s) - English
Resource type - Journals
ISSN - 2278-3075
DOI - 10.35940/ijitee.l2628.1081219
Subject(s) - aerospace , radiation , radiation resistance , electronics , radiation hardening , nand gate , flash (photography) , flash memory , computer science , systems engineering , automotive engineering , embedded system , electrical engineering , engineering , aerospace engineering , logic gate , art , physics , quantum mechanics , visual arts , detector
Space radiation effects in electronics are significantly important during the development of devices for aerospace applications. Radiation tolerant component base significantly lag behind the commercial chips with regard to operating speed, memory capacity and etc. The issue of commercial memory use in information storage devices is especially acute in conditions of high radiation. Within the framework on development of micromodule 3D integration technology for onboard equipment for aerospace applications, the study of the radiation effects influence on the operation of commercial NAND-Flash chips and methods of counteracting these effects are carried out.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom