Open AccessMethods for Increasing the Radiation Resistance of 3D Integration Memory Modules for Aerospace Applications
Author(s) -
R.S. Litvinenko*,
I.V. Prokofiev,
V.M. Matveev
Publication year - 2019
Publication title -
international journal of innovative technology and exploring engineering
Language(s) - English
Resource type - Journals
ISSN - 2278-3075
DOI - 10.35940/ijitee.l2628.1081219
Subject(s) - aerospace , radiation resistance , radiation , radiation hardening , electronics , nand gate , computer science , flash (photography) , radiation tolerance , flash memory , embedded system , systems engineering , automotive engineering , electrical engineering , engineering , aerospace engineering , logic gate , art , physics , quantum mechanics , detector , visual arts , medicine , radiation therapy
Space radiation effects in electronics are significantly important during the development of devices for aerospace applications. Radiation tolerant component base significantly lag behind the commercial chips with regard to operating speed, memory capacity and etc. The issue of commercial memory use in information storage devices is especially acute in conditions of high radiation. Within the framework on development of micromodule 3D integration technology for onboard equipment for aerospace applications, the study of the radiation effects influence on the operation of commercial NAND-Flash chips and methods of counteracting these effects are carried out.