Open AccessNano Power Current Reference Circuit consisting of Sub-threshold CMOS Circuits
Author(s) -
Ashutosh Kumar Singh,
Kamal Bhati
Publication year - 2019
Publication title -
international journal of innovative technology and exploring engineering
Language(s) - English
Resource type - Journals
ISSN - 2278-3075
DOI - 10.35940/ijitee.l2609.119119
Subject(s) - cmos , electronic circuit , electrical engineering , bandgap voltage reference , voltage , threshold voltage , dissipation , volt ampere , biasing , materials science , constant power circuit , power (physics) , voltage reference , current (fluid) , led circuit , optoelectronics , physics , switched mode power supply , transistor , engineering , dropout voltage , short circuit , quantum mechanics , thermodynamics
a low voltage CMOS Nano power current reference circuit has been presented in this paper and also the circuit simulation performance in 180-nm UMC CMOS technology. Most of the MOSFETs operate in sub-threshold region consisting of bias-voltage, start-up and current-source sub-circuits. A stable reference current of 4-nA lying in supply voltage range of 1 V-1.8 V has been generated with line sensitivity of 0.203% /V. Within the temperature range of 0°C to 100 °C, and the voltage level of 1.8 V, the temperature coefficient was 7592ppm/°C. At the same voltage supply, the power dissipation was found out to be 380 NW. It is suitable to use this circuit in sub threshold power aware large scale integration.