Open AccessImpact of Mole Fraction Variation on Nanoscale SiGe Hybrid FinFET on Insulator
Publication year - 2019
Publication title -
international journal of innovative technology and exploring engineering
Language(s) - English
Resource type - Journals
ISSN - 2278-3075
DOI - 10.35940/ijitee.l1012.10812s219
Subject(s) - mole fraction , nanoscopic scale , materials science , band gap , silicon on insulator , optoelectronics , mole , mosfet , insulator (electricity) , fraction (chemistry) , silicon , nanotechnology , electrical engineering , voltage , chemistry , transistor , engineering , organic chemistry , biochemistry
This work investigates the performance of SiGe Hybrid JunctionLess FinFET (HJLFinFET) on insulator with different mole fraction x. The band gap difference for different mole fractions are explored. Impact of electrical characteristics and SCE of HJLFinFET are analyzed with fin width 10nm and varying gate length from 5nm-40nm for different mole fraction. Synopsys Sentaurus TCAD tool(sprocess and sdevice) are used in Device modelling and device simulation. Simulation results shows improvement in On current, DIBL and SS. For high performance application SiGe with mole fraction less than 0.3 at channel length less than 10nm are suitable because of the bandgap value is similar to silicon.