Open AccessDesign A High Speed Spin-Torque Transfer Magnetic Tunnel Junction (Stt-Mtj) Non-Volatile Flip-Flops Based On Memory
Author(s) -
K. Bala Krishna,
P. Santhosh,
T. Indira
Publication year - 2019
Publication title -
international journal of innovative technology and exploring engineering
Language(s) - English
Resource type - Journals
ISSN - 2278-3075
DOI - 10.35940/ijitee.k2545.0981119
Subject(s) - spin transfer torque , tunnel magnetoresistance , magnetoresistive random access memory , flops , backup , electrical engineering , latency (audio) , energy consumption , non volatile memory , torque , computer science , engineering , electronic engineering , computer hardware , embedded system , materials science , random access memory , mechanical engineering , physics , parallel computing , magnetization , layer (electronics) , quantum mechanics , magnetic field , composite material , thermodynamics
Basically, in low power applications, the energy should be harvested depend on the frequent interruptions. In this paper we proposed the design of spin-transfer torque magnetic tunnel junctions (STT-MTJs) non volatile based on flip flops based memory. The main intent of non volatile is to address the state of system by saving the memory. By using STT-MTJs based flip flop, high energy consumption will be obtained and there will be backup of the system. In CMOS the flip flop will used standard magnetic MRAM technology. The main intent of magnetic tunnel junctions is to store the data. The proposed non volatile flip flop will determine the delay and energy. Logic circuits are enabled using non volatility and this will reduce the start up latency. This start up latency ranges from micro seconds to hundred pico seconds. Here the information is stored using non volatile logic of memory. This process is done on pre chip basis. Hence compared to existed system, the proposed system gives effective results.