Open AccessRealization of Memory Effect on Hysteresis Lobe Area of the TiO2 Based HP Memristor
Publication year - 2019
Publication title -
international journal of innovative technology and exploring engineering
Language(s) - English
Resource type - Journals
ISSN - 2278-3075
DOI - 10.35940/ijitee.k1982.1081219
Subject(s) - memristor , hysteresis , realization (probability) , lobe , memistor , computer science , mathematics , electronic engineering , physics , resistive random access memory , condensed matter physics , voltage , engineering , quantum mechanics , medicine , statistics , anatomy
In this paper, the memory effect on the hysteresis lobe area of TiO2 based memristive model is studied. The Green’s theorem is used to derive the novel general formula for the area of hysteresis lobe of HP memristor model. Further the memory and boundary values are derived mathematically, where the memory needs to be stable. It is analyzed that in the initial state this nanoscale non-volatile memristor retains its memory. The relation of memory with the lobe area and memristance are also established respectively. The analytical results mentioned above are demonstrated by numerical simulations and graphical representations.