Open AccessDesign and Analysis of Shunt Configuration-Based RF MEMS Switch
Author(s) -
G. Ganesh,
K. Srinivasa Rao
Publication year - 2019
Publication title -
international journal of innovative technology and exploring engineering
Language(s) - English
Resource type - Journals
ISSN - 2278-3075
DOI - 10.35940/ijitee.i8627.078919
Subject(s) - insertion loss , return loss , capacitance , shunt (medical) , microelectromechanical systems , materials science , voltage , electrical engineering , rf switch , conductor , dielectric loss , switching time , crossover switch , electrical conductor , optoelectronics , radio frequency , electronic engineering , optical switch , dielectric , engineering , physics , electrode , medicine , quantum mechanics , antenna (radio) , cardiology , composite material
In this paper a shunt type RF MEMS switch design and analysis for tunable applications is presented. Switch works based on the electrostatic actuation principle. Theoretical calculated Switch parameters are compared with the electromechanical and electromagnetic simulation results. The effect of various materials like conductor and dielectrics & parameters like airgap, beam width on the electromechanical parameters of the switch is analyzed to get low pull-in voltage, high switching speed, better capacitance ratio, return loss, insertion loss, and isolation loss. The switch up and down state capacitance are 40.9fF and 4.45pF respectively. Down to up state capacitance ratio of this switch is 108.69. The designed switch has an actuation voltage of 32V. RF performance is simulated from 1-10GHz. In ON state switch has return loss of -35dB, insertion loss of -0.1dB. In the OFF-state switch has return loss of -1dB and an isolation loss of -11dB.