Open AccessFuzzy Logic based Method for the Extraction of Extrinsic and Intrinsic Elements of Microwave Transistors
Author(s) -
Guillermo Rafael-Valdivia*
Publication year - 2019
Publication title -
international journal of innovative technology and exploring engineering
Language(s) - English
Resource type - Journals
ISSN - 2278-3075
DOI - 10.35940/ijitee.b7936.129219
Subject(s) - mesfet , transistor , microwave , electronic engineering , fuzzy logic , high electron mobility transistor , monolithic microwave integrated circuit , transconductance , capacitance , reliability (semiconductor) , computer science , materials science , electrical engineering , engineering , field effect transistor , cmos , physics , voltage , amplifier , telecommunications , artificial intelligence , power (physics) , electrode , quantum mechanics
In this paper we propose a new method for the extraction of extrinsic and intrinsic elements for microwave transistors based on a fuzzy logic architecture. The proposed technique uses the experience of the designer in order to extract and optimize in a smart way only the electrical elements required for an accurate multibias scattering parameters prediction. We tested our model with a GaAs MESFET 6 x 120 um and a Al GaAs P-HEMT 6 x 15 um device. It has been demonstrated that the proposed method is more accurate than the conventional one, evaluated with the previous technologies. The global behavior of the transconductance (gm) and gate to source capacitance (Cgs) measured with this technique agrees with the physical properties of the above mentioned technologies. Another advantage of this method is that the conventional “Cold-FET” configurations (Vds=0V) are not required, which warrant the reliability of the microwave transistor. The methodology presented in this work can be used in the RF circuit design industry as a first step for an accurate transistor characterization.