Open AccessDifferent LNA Topologies Designed with HEMT Technologies at Ka and Q Bands
Publication year - 2019
Publication title -
international journal of innovative technology and exploring engineering
Language(s) - English
Resource type - Journals
ISSN - 2278-3075
DOI - 10.35940/ijitee.b1069.1292s319
Subject(s) - high electron mobility transistor , network topology , ka band , cmos , dissipation , electronic engineering , electrical engineering , computer science , engineering , topology (electrical circuits) , physics , transistor , computer network , voltage , thermodynamics
The main drawback of designing LNA with CMOS technology is the high power dissipation. This problem can be overcome by designing LNA with HEMT technology. In this paper we went through several LNA‘s designed with different HEMT technologies from the past few decades. Assessment of different LNA topologies with HEMT technologies around ka and Q band is performed in this paper along with EM simulations of PP1010 unconditionally stable LNA.