Open AccessModel of HfO2/Al2O3 Dielectric ALNINNAlganmos HEMT for Power Application
Publication year - 2019
Publication title -
international journal of innovative technology and exploring engineering
Language(s) - English
Resource type - Journals
ISSN - 2278-3075
DOI - 10.35940/ijitee.a5185.119119
Subject(s) - high electron mobility transistor , materials science , optoelectronics , stack (abstract data type) , dielectric , power density , power (physics) , electronic engineering , electrical engineering , transistor , computer science , physics , engineering , voltage , operating system , quantum mechanics
The work involves to devise dielectric HfO2 /Al2O3MOS-HEMT stack to validate for the device structure through the refinement of mesh analysis. The structure of the AlN\InN\AlGaN HEMT MOS-HEMTs are designed and meshed using the script file in the Sentaurus structure editor. TheAlN\InN\AlGaN MOS-HEMTs output characteristic are examined for physics of MOS-HEMT in Hydrodynamic model TCAD. The amalgamation formation ofthe Al0.30GaN0.70 barrierinterface with the channelofhigh 2DEG density result in anincreaseddrain current density and high trans conductance. Additional the device performance of DC transfer characteristics, small signal analysis of AlN/InN/AlGaNMOS-HEMT are analyzed and simulated.