Open AccessSilicon Carbide MESFET High Frequency Oscillator for Microwave Applications
Author(s) -
Boggadi Nagarjuna Reddy,
high speed scholar
Publication year - 2019
Publication title -
international journal of innovative science and modern engineering
Language(s) - English
Resource type - Journals
ISSN - 2319-6386
DOI - 10.35940/ijisme.a1141.096219
Subject(s) - mesfet , microwave , materials science , transistor , silicon carbide , vackář oscillator , optoelectronics , voltage controlled oscillator , monolithic microwave integrated circuit , field effect transistor , variable frequency oscillator , electrical engineering , local oscillator , phase noise , engineering , cmos , telecommunications , composite material , voltage , amplifier
The Gouriet oscillator is mainly dealing with 4H-SiC metal semiconductor field effect transistor is fabricated with HPSI substrate and passive integrated elements are based on design for demand of the required function of frequency 1GHz. This high frequency or temperature oscillator is operated from 30 to 200˚C, the gain of the delivered power of 21.8dbm at the frequency of 1GHz and the temperature of 200˚C. The oscillator transistor output response is at 200˚C, the improved percentage is 15%. This output response of the difference in between the frequency around the vary of temperature is less than 0.5%.