Open AccessResistivity of Fe Al Multilayered Thin Films from Low Temperature to Room Temperature
Author(s) -
Veeranna Kalkori,
Santosh Kori,
C Shweta,
R. Rawat
Publication year - 2020
Publication title -
international journal of engineering and advanced technology
Language(s) - English
Resource type - Journals
ISSN - 2249-8958
DOI - 10.35940/ijeat.f8970.029320
Subject(s) - electrical resistivity and conductivity , materials science , residual resistivity , atmospheric temperature range , aluminium , temperature coefficient , thin film , activation energy , deposition (geology) , vacuum deposition , composite material , condensed matter physics , nanotechnology , chemistry , electrical engineering , physics , thermodynamics , geology , paleontology , engineering , organic chemistry , sediment
By using electron beam gun and thermal deposition techniques in the vacuum range 6 x10-5mbar. The pure materials of 99.99% purity of iron and aluminium multilayers films grown on glass substrates at 300K in the following viz. The resistance was measured using four probe method at UGC-DAE Consortium Indore (4.2K to 300K) later resistivity, conductivity, temperature co-efficient of resistance (TCR), residual resistivity ratio (RRR) , and activation energy(Ea) were calculated. The resistivity behavior shown that the resistivity is increased with increasing the n value, resistivity is increased with increasing temperature. The data belonging to metallic region has been analyzed using the conventional power law’s and it is first time this set of films have explore resistivity at low temperature