Open AccessMetal Oxide Semiconductor: Future Material For Gas Sensors And It’s Synthesis Techniques
Author(s) -
Binita Nanda,
Sudhasini Panda,
Farida Ali
Publication year - 2019
Publication title -
international journal of engineering and advanced technology
Language(s) - English
Resource type - Journals
ISSN - 2249-8958
DOI - 10.35940/ijeat.f1299.0986s319
Subject(s) - semiconductor , materials science , oxide , nano , nanotechnology , porosity , moss , metal , nanostructure , nanomaterials , band gap , semiconductor materials , optoelectronics , composite material , metallurgy , botany , biology
This paper provides a complete idea about metal oxide semiconductors ((MOSs) for gas sensing application. Metal oxide semiconductor nano-materials are showing much higher strength in many industries, research laboratories and public health and so on with their effective chemical, physical, and electronic properties. The morphology, band gap, porosity, conductivity properties, low cost and high surface area etc. are few of the properties of MOSs that are responsible for the enhancement of sensing properties in various applications. Besides these, now-a-days MOSs are grown in different nanostructures like nano rods, nano flowers, nano sheets, nanowires etc. using the various growth techniques which are further responsible for their betterment as gas sensors. Therefore, this paper gives a complete idea about the different methods of synthesis of MOSs.