Open AccessSubthreshold Region based Linear Feedback Shift Register
Author(s) -
B. Lakshmi,
Dr.M. Kamaraju,
Dr.K. Babulu
Publication year - 2019
Publication title -
international journal of engineering and advanced technology
Language(s) - English
Resource type - Journals
ISSN - 2249-8958
DOI - 10.35940/ijeat.f1205.0886s219
Subject(s) - subthreshold conduction , shift register , cmos , computer science , electronic circuit , dissipation , transistor , electronic engineering , dynamic demand , capacitance , power (physics) , electrical engineering , engineering , voltage , physics , electrode , quantum mechanics , thermodynamics
Growing demand for portable devices and fast increases in complexity of chip cause power dissipation is an important parameter. Power consumption and dissipation or generations of more heat possess a restriction in the direction of the integration of more transistors. Several methods have been proposed to reduce power dissipation from system level to device level. Subthreshold circuits are widely used in more advanced applications due to ultra low-power consumption. The present work targets on construction of linear feedback shift registers (LFSR) in weak inversion region and their performance observed in terms of parameters like power delay product (PDP). In CMOS circuits subthreshold region of operation allows a low-power for ample utilizations but this advantage get with the penalty of flat speed. For the entrenched and high speed applications, improving the speed of subthreshold designs is essential. To enhance this, operate the devices at maximum current over capacitance. LFSR architectures build with various types of D flip flop and XOR gate circuits are analyzed. Circuit level Simulation is carried out using 130 nm technologies.