Open AccessModeling and Simulation Techniques of Amorphous Silicon Thin Film Transistors TFT for Large Area and Flexible Microelectronics
Author(s) -
Piyush Eklavya,
Nirmalya Debnath,
S. R. Vaishnav,
N Ramavenkateswaran
Publication year - 2020
Publication title -
international journal of engineering and advanced technology
Language(s) - English
Resource type - Journals
ISSN - 2249-8958
DOI - 10.35940/ijeat.e9477.069520
Subject(s) - thin film transistor , microelectronics , active matrix , transistor , spice , oxide thin film transistor , electronic circuit , computer science , materials science , electronic engineering , optoelectronics , electrical engineering , layer (electronics) , engineering , nanotechnology , voltage
The Thin Film Transistor (TFT) is the key active components of emerging large area and flexible microelectronics (LAFM) which includes a flexible display, robotics skin, sensor & disposable electronics. Different semiconducting or organic conducting materials could be used in the fabrication of TFTs. The material used for the active layer also influences the performance of the TFT uniquely[1]. Silicon based thin film transistors have made possible the development of the active-matrix liquid crystal display within cell-touch technology [2,3,4]. Modern-day simulation software does not support the older SPICE code models, and rather rely on the new drag and drop concepts. The TFT(Thin Film Transistor) Model device wasn't readily available on the LT-Spice Tool which was simulated and the circuit level simulation for basic gates using the TFT was carried out successfully. The model symbol shall be useful for analysis and simulation of the TFT based circuits which require continuous behavioral study and analysis. For a device to be simulated that way, a “.lib” file containing a symbol of the device is necessary. This paper focuses on circuit-level simulation of user-defined device parameters from reported experimental data.