Open AccessDevelopment of Transparent and Flexible Transistor and Analysis of its Electrical and Optical Performances
Author(s) -
Abdellah Mrij,
Abdelmajid El Bakkali,
Jaouad Foshi
Publication year - 2019
Publication title -
international journal of engineering and advanced technology
Language(s) - English
Resource type - Journals
ISSN - 2249-8958
DOI - 10.35940/ijeat.a1022.1291s619
Subject(s) - transistor , materials science , optoelectronics , semiconductor , flexibility (engineering) , dopant , electrical impedance , engineering physics , computer science , nanotechnology , electrical engineering , doping , engineering , statistics , mathematics , voltage
This work discusses the development of innovative transistor from intelligent thin film. A developed semiconductor junction that constitutes the core of concepted transistor is being studied. Each technology of semiconductors has shortage of some performances. The recent work is an alternative by exploiting intelligent materials to build a transistor with transparency and flexibility characteristics. Many processes are encountered during preparation of the film especially chemical deposition and exposition to laser beam to ensure dopants integration. The physical phase is a challenge for newest technology like the plasma. Thereon, we give a real example of smart thin film. The band gap is also a defiance that we are reducing to ameliorate precisely the impedance and thickness and keep at order of nanotechnology. The fabricated junctions are tested by studying their operation in ordinal conditions. We judge the quality of junctions and transistor from their optical properties and electrical ones. Moreover, we analyze evolutions of electrical impedance in function of temperature and optical reflection coefficient.