Open AccessStatistical investigation of dislocation induced leakage current paths in AlGaN/GaN HEMT structures on Si and the impact of growth conditions
Author(s) -
Sven Besendörfer,
Elke Meißner,
Jochen Friedrich
Publication year - 2022
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/ac8639
Subject(s) - materials science , dislocation , high electron mobility transistor , nucleation , optoelectronics , transistor , condensed matter physics , composite material , electrical engineering , chemistry , voltage , physics , organic chemistry , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom