Open AccessImportance of source and drain extension design in cryogenic MOSFET operation: causes of unexpected threshold voltage increases
Author(s) -
Takumi Inaba,
Hidehiro Asai,
Junichi Hattori,
Koichi Fukuda,
Hiroshi Oka,
Takahiro Mori
Publication year - 2022
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/ac819b
Subject(s) - drain induced barrier lowering , threshold voltage , saturation (graph theory) , mosfet , materials science , field effect transistor , channel length modulation , voltage , transistor , channel (broadcasting) , semiconductor , optoelectronics , condensed matter physics , electrical engineering , physics , engineering , mathematics , combinatorics