z-logo
open-access-imgOpen Access
InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall
Author(s) -
Pavel Kirilenko,
Daisuke Iida,
Zhe Zhuang,
Kazuhiro Ohkawa
Publication year - 2022
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/ac7fdc
Subject(s) - passivation , materials science , light emitting diode , optoelectronics , leakage (economics) , hydrogen , quantum efficiency , nanotechnology , chemistry , layer (electronics) , organic chemistry , economics , macroeconomics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom