Open AccessLimited current conduction due to various types of stacking faults in n-type 4H-SiC epilayers
Author(s) -
Satoshi Asada,
Koichi Murata,
Hidekazu Tsuchida
Publication year - 2022
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/ac5c01
Subject(s) - stacking , thermal conduction , materials science , schottky diode , diode , optoelectronics , current (fluid) , electron , atmospheric temperature range , condensed matter physics , schottky barrier , composite material , electrical engineering , nuclear magnetic resonance , physics , thermodynamics , quantum mechanics , engineering
Impacts of various types of stacking faults (SFs) on electron conduction in an n-type 4H-SiC epilayer were experimentally investigated. N-type Schottky barrier diodes were fabricated, containing a SF plane in the active area with a covering ratio of unity, whereupon the current–voltage characteristics were evaluated within a temperature range of 293–523 K. The forward current was significantly limited due to the SFs, the degree of which depended on the type of SF, and the current limitation was moderated by increasing the temperature. These results could be consistently explained by the well-known quantum well model.