Open AccessDecoupling the sequence of dielectric breakdown in single device bilayer stacks by radiation-controlled, spatially localized creation of oxide defects
Author(s) -
Fernando Aguirre,
Alok Ranjan,
Nagarajan Raghavan,
Andrea Padovani,
Sebastián Pazos,
Nahuel Vega,
Nahuel Müller,
M. E. Debray,
Joel Molina,
K. L. Pey,
F. Palumbo
Publication year - 2021
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/ac345d
Subject(s) - materials science , time dependent gate oxide breakdown , dielectric strength , optoelectronics , sequence (biology) , decoupling (probability) , oxide , dielectric , transistor , nanosheet , reliability (semiconductor) , bilayer , nanotechnology , gate oxide , electrical engineering , chemistry , physics , voltage , engineering , membrane , biochemistry , power (physics) , quantum mechanics , control engineering , metallurgy
The breakdown (BD) sequence in high-K/interfacial layer (HK/IL) stacks for time-dependent dielectric breakdown (TDDB) has remained controversial for sub-45 nm CMOS nodes, as many attempts to decode it were not based on proper experimental methods. Know-how of this sequence is critical to the future design for reliability of FinFETs and nanosheet transistors. We present here the use of radiation fluence as a tool to precisely tune the defect density in the dielectric layer, which jointly with the statistical study of the soft, progressive and hard BD, allow us to infer the BD sequence using a single HfO 2 –SiO x bilayered MOS structure.