Open AccessHigh-thermal-stability resistor formed from manganese nitride compound that exhibits the saturation state of the mean free path
Author(s) -
Hisashi Kino,
Takafumi Fukushima,
Tetsu Tanaka
Publication year - 2021
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/ac18b0
Subject(s) - manganese , materials science , nitride , resistor , saturation (graph theory) , temperature coefficient , thermal stability , antiperovskite , oxide , optoelectronics , composite material , chemical engineering , layer (electronics) , metallurgy , electrical engineering , mathematics , engineering , combinatorics , voltage
Antiperovskite manganese nitride compounds possess the saturation characteristics of the mean free path at an approximate room temperature. Therefore, such compounds show a flat resistance–temperature curve at an approximate room temperature. In this paper, we propose a manganese nitride resistor for high-thermal-stability systems. We fabricated and evaluated the micro/nanoscale manganese nitride compound resistors using the complementary metal-oxide-semiconductor-compatible process. The thermal coefficient of the fabricated manganese nitride compound resistor was as low as that of other near-zero temperature-coefficient of resistivity materials. These results indicate that manganese nitride compounds can achieve higher thermal stability.