High-thermal-stability resistor formed from manganese nitride compound that exhibits the saturation state of the mean free path | Zendy

Hisashi Kino | Zendy; Takafumi Fukushima | Zendy; Tetsu Tanaka | Zendy

Open Access

High-thermal-stability resistor formed from manganese nitride compound that exhibits the saturation state of the mean free path

Author(s) -

Hisashi Kino,

Takafumi Fukushima,

Tetsu Tanaka

Publication year - 2021

Publication title -

applied physics express

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.911

H-Index - 94

eISSN - 1882-0786

pISSN - 1882-0778

DOI - 10.35848/1882-0786/ac18b0

Subject(s) - materials science , manganese , nitride , resistor , saturation (graph theory) , thermal stability , temperature coefficient , oxide , antiperovskite , optoelectronics , composite material , chemical engineering , layer (electronics) , metallurgy , electrical engineering , mathematics , combinatorics , voltage , engineering

Antiperovskite manganese nitride compounds possess the saturation characteristics of the mean free path at an approximate room temperature. Therefore, such compounds show a flat resistance–temperature curve at an approximate room temperature. In this paper, we propose a manganese nitride resistor for high-thermal-stability systems. We fabricated and evaluated the micro/nanoscale manganese nitride compound resistors using the complementary metal-oxide-semiconductor-compatible process. The thermal coefficient of the fabricated manganese nitride compound resistor was as low as that of other near-zero temperature-coefficient of resistivity materials. These results indicate that manganese nitride compounds can achieve higher thermal stability.

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