Open AccessPolycrystalline diamond growth on β-Ga2O3 for thermal management
Author(s) -
Mohamadali Malakoutian,
Yiwen Song,
Chao Yuan,
Chenhao Ren,
James Spencer Lundh,
Robert M. Lavelle,
Joseph E. Brown,
David W. Snyder,
Samuel Graham,
Sukwon Choi,
Srabanti Chowdhury
Publication year - 2021
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/abf4f1
Subject(s) - diamond , nucleation , materials science , thermal conductivity , epitaxy , crystallite , polycrystalline diamond , thermal , composite material , optoelectronics , nanotechnology , crystallography , layer (electronics) , metallurgy , chemistry , thermodynamics , physics , organic chemistry
We report polycrystalline diamond epitaxial growth on β -Ga 2 O 3 for device-level thermal management. We focused on establishing diamond growth conditions on β -Ga 2 O 3 accompanying the study of various nucleation strategies. A growth window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration of diamond growth on β -Ga 2 O 3 , a diamond thermal conductivity of 110 ± 33 W m −1 K −1 and a diamond/ β -Ga 2 O 3 thermal boundary resistance of 30.2 ± 1.8 m 2 K G −1 W −1 were measured. The film stress was managed by growth optimization techniques preventing delamination of the diamond film. This work marks the first significant step towards device-level thermal management of β -Ga 2 O 3 electronic devices.
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