Open AccessInsight into segregation sites for oxygen impurities at grain boundaries in silicon
Author(s) -
Yutaka Ohno,
Jie Ren,
Shingo Tanaka,
Masanori Kohyama,
Koji Inoue,
Yasuo Shimizu,
Yasuyoshi Nagai,
Hideto Yoshida
Publication year - 2021
Publication title -
applied physics express
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.911
H-Index - 94
eISSN - 1882-0786
pISSN - 1882-0778
DOI - 10.35848/1882-0786/abe80d
Subject(s) - grain boundary , silicon , materials science , atom probe , impurity , oxygen , oxygen atom , ab initio , range (aeronautics) , atom (system on chip) , crystallography , focused ion beam , beam (structure) , ab initio quantum chemistry methods , molecular physics , ion , analytical chemistry (journal) , metallurgy , microstructure , chemistry , composite material , optics , molecule , physics , organic chemistry , computer science , embedded system , chromatography
The three-dimensional distribution of oxygen atoms segregated at Σ9{114} grain boundaries (GBs) in Czochralski-grown silicon ingots is analyzed within a high spatial resolution of less than 0.5 nm by atom probe tomography combined with a focused ion beam (FIB) operated at −150 °C. The analysis reveals a segregation of oxygen atoms within a range of 2.5 nm across the GB plane, which is much narrower in comparison with the previous reports obtained using a conventional FIB. The oxygen concentration profile accurately reflects the distribution of the segregation sites, which exist at bond-centered sites under tensile stresses above 2 GPa, as calculated by ab initio local stress calculations.